物理学报Issue(10)：1-9,9.DOI:10.7498/aps.63.104216
InGaAs单光子探测器传感检测与淬灭方式∗
Sensing detection and quenching metho d for InGaAs single-photon detector
摘要
Abstract
A gated operation dynamic bias control strategy of InGaAs single-photon avalanche diode (SPAD) and circuit implementation are proposed based on the research of the SPAD performances. By the gated operation active quenching method the quenching time can be lowered, also dark count and afterpulsing effect are inhibited. The circuit fabricated by standard complementary metal oxide semiconductor (CMOS) technology and SPAD fabricated by non-standard CMOS technology are interconnected through the indium column interconnection hybrid packaging process. In the low temperature (−30 ◦C) test conditions, the avalanche current signal triggered by light is extracted and avalanche phenomenon is quickly quenched. Studies in this paper are the sensing resistance and critical sensing voltage effect on electrical performance of the detector and the implementation method of the detection circuit. The recovery time and transfer delay of the SPAD are 575 and 563 ps, respectively and the quenching time is 1.88 ns. These characteristics meet the requirements for the nanosecond precision sensor detection application.关键词
单光子雪崩二极管/盖革模式/门控/主动淬灭Key words
single-photon avalanche diode/Geiger mode/gated operation/active quench引用本文复制引用
郑丽霞,吴金,张秀川,涂君虹,孙伟锋,高新江..InGaAs单光子探测器传感检测与淬灭方式∗[J].物理学报,2014,(10):1-9,9.基金项目
江苏省自然科学基金(批准号：BK2012559)资助的课题.@@@@ Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012559) （批准号：BK2012559）
