物理学报Issue(10)：1-5,5.DOI:10.7498/aps.63.107104
在半导体-金属相变温度附近氧化钒薄膜光学性质的异常变动∗
Abnormal variation of optical prop erties of vanadium oxide thin film at semiconductor-metal transition
摘要
Abstract
The optical properties of vanadium oxide thin film are measured at semiconductor-metal transition, including reflectance and transmittance results at different wavelengths which show different trends during the phase transition. With a multi-level reflection-transmission model of incoherent light, we calculate the values of refractive index n and extinction coefficient k at different wavelengths, and show that the abnormal optical properties result not only from the dependences of n and k on the wavelength, but also from multiple reflections in the absorbing film.关键词
氧化钒薄膜/半导体-金属相变/多级反射-透射模型Key words
vanadium oxide thin film/semiconductor-metal transition/multi-level reflection-transmission model引用本文复制引用
杨伟,梁继然,刘剑,姬扬..在半导体-金属相变温度附近氧化钒薄膜光学性质的异常变动∗[J].物理学报,2014,(10):1-5,5.基金项目
国家重点基础研究发展计划(批准号:2013CB922304)、国家自然科学基金青年科学基金(批准号:61101055)和极化材料与器件教育部重点实验室基金(批准号：KFKT20130002)资助的课题.@@@@ Project supported by the State Key Development Program for Basic Research of China (Grant No.2013CB922304), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No.61101055), and the Foundation of Key Laboratory of Polar Materials and Devices of Ministry of Education, China (Grant No. KFKT20130002) （批准号:2013CB922304）
