物理学报Issue(11)：1-6,6.DOI:10.7498/aps.63.117702
无氨法制备GaN纳米线及其光电性能研究
Preparation of GaN nanowires by nonammonia metho d and their photo electronic prop erties
摘要
Abstract
Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ◦C. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.关键词
GaN纳米线/无氨法/场发射/光致发光Key words
GaN nanowires/non-ammonia/field emission/photoluminescence引用本文复制引用
赵军伟,张跃飞,宋雪梅,严辉,王如志..无氨法制备GaN纳米线及其光电性能研究[J].物理学报,2014,(11):1-6,6.基金项目
国家自然科学基金(批准号:11274029,11074017)、北京市青年拔尖人才培育计划(批准号:CIT&TCD201204037)、北京工业大学京华人才支持计划(批准号:2014-JH-L07)、北京市科技新星计划(批准号2080B10)和北京市属市管高等学校创新团队建设推进计划(批准号：IDHT20140506)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant Nos.11274029,11074017), the Im-portation and Development of High-Caliber Talents Project of Beijing Municipal Institutions, China (Grant No. C-IT&TCD201204037), the Jing-Hua Talents Project of Beijing University of Technology, China (Grant No.2014-JH-L07), the Beijing Nova program (Grant No.2080B10), and the Foundation on the Creative Research Team Construction Promotion Project of Beijing Municipal Institution, China (Grant No. IDHT20140506) （批准号:11274029,11074017）
