物理学报Issue(11)：1-5,5.DOI:10.7498/aps.63.117703
Si掺杂HfO2薄膜的铁电和反铁电性质
Ferro electric and antiferro electric prop erties of Si-dop ed HfO2 thin films
摘要
Abstract
Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties were compared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ◦C. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.关键词
HfO2薄膜/铁电/反铁电/相变Key words
hafnium oxide thin films/ferroelectric/antiferroelectric/phase transition引用本文复制引用
周大雨,徐进,Johannes Müller,Uwe Schröder..Si掺杂HfO2薄膜的铁电和反铁电性质[J].物理学报,2014,(11):1-5,5.基金项目
国家自然科学基金(批准号:51272034)和电子薄膜与集成器件国家重点实验室开放基金(批准号：KFJJ201101)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.51272034), and the Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) of China (Grant No. KFJJ201101) （批准号:51272034）
