物理学报Issue(11)：1-6,6.DOI:10.7498/aps.63.118802
溅射后硒化法制备的CIGS薄膜中Ga元素扩散研究
Gallium diffusion in CIGS thin films prepared by sequential sputtering/selenization technique
摘要
Abstract
In the sequential sputtering/selenization process, Ga segregation at the back of Cu(In, Ga)Se2 (CIGS) absorber is frequently observed. In this paper, Ga diffusion in CIGS absorber is investigated during the sputtering and selenization process. Results show that Ga diffusion is closely related to Cu/(In+Ga) ratio in the metallic precursors and the selenization temperature, but barely influenced by Ga/(In+Ga) ratio in the metallic precursors. Based on Fick’s second law, a simplified model is established to describe Ga diffusion from the back to the surface of CIGS absorber, which suggests that Ga diffusion coeffcient is the dominant factor to constrain Ga content near the absorber surface. By process optimization, Ga/(In+Ga) ratio near the absorber surface is successfully increased. Accordingly, a CIGS solar cell device with effciency of 12.42%has been obtained.关键词
CIGS/Ga扩散/硒化/太阳能电池Key words
CIGS/Ga diffusion/selenization/solar cell引用本文复制引用
毛启楠,张晓勇,李学耕,贺劲鑫,于平荣,王东..溅射后硒化法制备的CIGS薄膜中Ga元素扩散研究[J].物理学报,2014,(11):1-6,6.基金项目
国家高技术研究发展计划(批准号:2012AA050702,2013AA050904)、国家重大科学研究计划(批准号:2011CB933300,2013CB934004)、国家自然科学基金(批准号:21371016)和国家科技支撑计划(批准号:2011BAK16B01)资助的课题.@@@@Project supported by the National High Technology Research and Development Program of China (Grant Nos.2012AA050702,2013AA050904), the National Basic Research Program of China (Grant Nos.2011CB933300,2013CB934004), the National Natural Science Foundation of China (Grant No.21371016), and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No.2011BAK16B01) （批准号:2012AA050702,2013AA050904）
