物理学报Issue(12)：1-7,7.DOI:10.7498/aps.63.127201
沟槽形状对硅基沟槽式肖特基二极管电学特性的影响
Effect of the trench shap e on the electrical prop erties of silicon based trench barrier schottky dio de
翟东媛 1赵毅 1蔡银飞 2施毅 1郑有炓1
作者信息
- 1. 南京大学电子科学与工程学院，南京 210093
- 2. 杭州启沛科技有限公司，杭州 311121
- 折叠
摘要
Abstract
With the globally enhancing demand for the energy saving and environmental protection of electronic products, the requirement for Schottky diode which is widely used in electronic products becomes higher and higher. The trench metal-oxide-semiconductor barrier Schottky (TMBS) diode is more and more favored because of its excellent performance. The shape of the trench plays an important role in determining the electrical properties of the Schottky diode. However, there is no intensive study on this point. In this study, we propose two novel trench structures, i. e., filleted corner trench and ladder trench. By performing the simulation with Medici, it is found that compared with the traditional trench TMBS diode, the filleted corner trench TMBS diode has a breakdown voltage with 15.8% increase under the conditions of the same leakage current and the forward turn-on voltage. Also, the ladder trench TMBS diode can reduce the leakage current by 35%, while have a breakdown voltage not smaller than the right angle trench TMBS and a forward turn-on voltage only a little bit higher than the right angle trench TMBS.关键词
肖特基二极管/金属-氧化物-半导体结构/沟槽式肖特基二极管/沟槽形状Key words
Schottky diode/metal-oxide-semiconductor structure/trench barrier Schottky diodes/trench shape引用本文复制引用
翟东媛,赵毅,蔡银飞,施毅,郑有炓..沟槽形状对硅基沟槽式肖特基二极管电学特性的影响[J].物理学报,2014,(12):1-7,7.
