物理学报Issue(12)：1-6,6.DOI:10.7498/aps.63.128501
90 nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理
Mechanism of multiple bit upsets induced by lo calized latch-up effect in 90 nm complementary metal semiconductor static random-access memory
摘要
Abstract
By using the pulsed laser single effect facility, the single event upset and latch-up phenomenon are studied, and the bitmap of 90 nm complementary metal oxide semiconductor (CMOS) static random-access memory (SRAM) is mapped. It is shown that many multiple bit upsets occur and pulsed supply current of 20 mA amplitude is monitored. Based on the technology computer aided design (TCAD), it is found that the localized latch-up in CMOS SRAM is the main reason for the single event multiple bit upsets. Finally, by analyzing the results of the pulsed laser experiment and TCAD, it is found that the P/N well potential collapse is the key physical mechanism responsible for the spreading of the single event latch-up effect in 90 nm CMOS SRAM.关键词
单粒子闩锁效应/器件仿真/多位翻转/脉冲激光Key words
single event latch-up effect/device simulation/multiple bit upsets/pulsed laser引用本文复制引用
陈睿,余永涛,上官士鹏,封国强,韩建伟..90 nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理[J].物理学报,2014,(12):1-6,6.基金项目
国家自然科学基金(批准号:41304148)和中国科学院知识创新工程青年基金(批准号：O82111A17S)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.41304148) and the Main Direction Program of Knowledge Innovation of Chinese Academy of Sciences (Grant No. O82111A17S) （批准号:41304148）
