物理学报Issue(13)：1-7,7.DOI:10.7498/aps.63.136804
nc-Si：H/α-SiC：H多层膜的结构与光吸收特性*
Structure and optical absorption of nc-Si:H/α-SiC:H multilayers
摘要
Abstract
Nanocrystalline silicon nc-Si:H/SiC:H multilayers were fabricated by thermal annealing of the hydrogenated amor-phous Si α-Si:H/hydrogenated amorphous silicon carbide α-SiC:H stacked structures prepared by plasma enhanced chemical vapor deposition (PECVD) system at 900—1000 ◦C. The microstructures of annealed samples were investigat-ed by Raman scattering, cross-section transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. Results demonstrate that the size of Si grains formed can be controlled by theα-Si:H layer thickness and annealing temperature. Optical absorption measurements show that the optical bandgap of the multilayered structures increases and the absorption coefficient decreases with diminishing Si grain size. However, the absorption coefficient and the optical bandgap of the multilayers are not influenced by the α-SiC:H layer thickness when the size of Si grains is kept constant.关键词
α-Si:H/α-SiC:H多层膜/光吸收边蓝移/量子限制效应Key words
α-Si:H/α-SiC:H multilayers/absorption edge blueshift/quantum confinement effect引用本文复制引用
马蕾,蒋冰,陈乙豪,沈波,彭英才..nc-Si：H/α-SiC：H多层膜的结构与光吸收特性*[J].物理学报,2014,(13):1-7,7.基金项目
国家自然科学基金(批准号:61306098)、河北省自然科学基金(批准号：E2012201088, F2013201196)、河北省高等学校科学技术研究项目(批准号:2011237, ZH2012019)和北京大学介观物理国家重点实验室开放性课题资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.61306098), the Natural Science Foun-dation of Hebei Province, China (Grant Nos. E2012201088, F2013201196), the Research Foundation of Education Bureau of Hebei Province, China (Grant Nos.2011237, ZH2012019), and the State Key Laboratoy for Artificial Microstructure and Mesoscopic Physics, Pecking University, Beijing, China （批准号:61306098）
