物理学报Issue(14)：1-7,7.DOI:10.7498/aps.63.147301
Ni/HfO2/Pt阻变单元特性与机理的研究
Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell
摘要
Abstract
Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio (>105) is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2 film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2 film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2 film for the on-state.关键词
阻变存储/二氧化铪薄膜/导电细丝Key words
resistive random access memory/hafnium dioxide film/conductive filament引用本文复制引用
庞华,邓宁..Ni/HfO2/Pt阻变单元特性与机理的研究[J].物理学报,2014,(14):1-7,7.基金项目
国家高技术研究发展计划(批准号:2011AA010403)资助的课题 （批准号:2011AA010403）
