物理学报Issue(14)：1-8,8.DOI:10.7498/aps.63.148503
沟槽型发射极SiGe异质结双极晶体管新结构研究
Research on SiGe hetero junction bip olar transistor with a trench-typ e emitter
摘要
Abstract
A novel SiGe heterojunction bipolar transistor (HBT) with a trench-type emitter is presented. Effects of the trench-type emitter on device performance are analyzed in detail, and current transport mechanism of the novel device is studied. The emitter resistances are parallel partitions by changing current path. Under the precondition without increasing the junction capacitance, the resistances of the new emitter are reduced effectively, and the frequency characteristics of the device are improved. Results show that the cutoff frequency and the maximum oscillation frequency of the new device are increased to 100.2 GHz and 134.4 GHz, respectively. More important is that the frequency characteristics are improved by the introduction of the trench-type emitter, while the current gain is not reduced and the junction capacitance is also not increased. A good trade-off is achieved among frequency, current gain, and junction capacitance. The trench-type emitter is designed to be optimal. With the change in sidewall height, no effects are found on the emitter resistances, and the frequency characteristics do not change, while the frequency characteristics are reduced when the sidewall width is increased.关键词
SiGe异质结双极晶体管/沟槽型发射极/发射极电阻Key words
SiGe HBT/trench-type emitter/emitter resistance引用本文复制引用
刘静,武瑜,高勇..沟槽型发射极SiGe异质结双极晶体管新结构研究[J].物理学报,2014,(14):1-8,8.基金项目
国家自然科学基金(批准号:61204094)、高等学校博士学科点专向科研基金(批准号:20106118120003)、陕西省工业攻关(批准号:2014K08-30)和陕西省教育厅科学研究计划(批准号:11JK0924)资助的课题 （批准号:61204094）
