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衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

冯秋菊 许瑞卓 郭慧颖 徐坤 李荣 陶鹏程 梁红伟 刘佳媛 梅艺赢

物理学报Issue(16):1-6,6.
物理学报Issue(16):1-6,6.DOI:10.7498/aps.63.168101

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

Influences of the substrate p osition on the morphology and characterization of phosphorus dop ed ZnO nanomaterial

冯秋菊 1许瑞卓 2郭慧颖 1徐坤 1李荣 1陶鹏程 3梁红伟 3刘佳媛 1梅艺赢1

作者信息

  • 1. 辽宁师范大学物理与电子技术学院,大连 116029
  • 2. 大连民族学院理学院预科部,大连 116600
  • 3. 大连理工大学物理与光电工程学院,大连 116024
  • 折叠

摘要

Abstract

One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V ) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.

关键词

化学气相沉积/磷掺杂ZnO/纳米材料/衬底位置

Key words

chemical vapor deposition/phosphorus doped ZnO/nanomaterials/substrate position

引用本文复制引用

冯秋菊,许瑞卓,郭慧颖,徐坤,李荣,陶鹏程,梁红伟,刘佳媛,梅艺赢..衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响[J].物理学报,2014,(16):1-6,6.

基金项目

国家自然科学基金(批准号:10804040,11004020)、辽宁省博士科研启动基金(批准号:20101061)、大连市自然科学基金(批准号:2010J21DW020)和中国科学院空间激光通信及检验技术重点实验室开放基金(批准号:KJJG10-1)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.10804040,11004020), the Doctoral Scientific Research Starting Foundation of Liaoning Province, China (Grant No.20101061), the Natureal Science Foundation of Dalian, China (Grant No.2010J21DW020), and the Open Foundation of Key Laboratory of Space Laser Communication and Testing Technology of Chinese Academy of Sciences, China (Grant No. KJJG10-1) (批准号:10804040,11004020)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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