物理学报Issue(17)：1-5,5.DOI:10.7498/aps.63.176101
铒离子注入绝缘体上Si的射程分布研究
Investigation on range distribution of Er ions implanted in silicon-on-insulator
摘要
Abstract
It is very important to take into consideration the distribution of range, range straggling, and lateral spread of ions implanted into semiconductor materials during designing and fabrication of semiconductor integration devices by means of ion implantation. Er ions with energies between 200 and 500 keV are implanted in SOI (silicon-on-insulator) samples. The mean projection range Rp and the range stragglings∆Rp of Er ions with a dose of 2 × 1015 cm-2 implanted in SOI samples are measured by Rutherford backscattering (RBS) technique. The obtained data are then compared with those predicted by TRIM codes. It is seen that the experimental data of Rp agree well with the theoretical values. However, there are great differences between the experimental data and the theoretical values of∆Rp.关键词
离子注入/绝缘体上Si/投影射程和射程离散/卢瑟福背散射技术Key words
ion implantation/silicon-on-insulator/projected range and range straggling/Rutherford backscattering technique引用本文复制引用
秦希峰,马桂杰,时术华,王凤翔,付刚,赵金花..铒离子注入绝缘体上Si的射程分布研究[J].物理学报,2014,(17):1-5,5.基金项目
国家自然科学基金(批准号:11205096)、山东省自然科学基金(批准号：ZR2011AM011, ZR2013AM014)、山东建筑大学博士基金(批准号：XNBS1341)和济南市科技发展项目(批准号:201202092, OUT_02440)资助的课题 （批准号:11205096）
