物理学报Issue(17)：1-10,10.DOI:10.7498/aps.63.177201
基于电压变化率的IGBT结温预测模型研究
Investigation of the prediction mo del of IGBT junction temp erature based on the rate of voltage change
摘要
Abstract
Based on semiconductor physics and the essential structure of insulated gate bipolar transistor (IGBT), the model of dVCE/d t is established through reasonable simplification and theoretical derivation. The influencing factors and temperature characteristics of dVCE/dt are studied in depth. It is concluded that dVCE/dt increases linearity with the increase of voltage or current, and decreases with the increase of junction temperature also linearly. On the basis of the model for dVCE/dt, the prediction model of junction temperature is established. Results of simulations and experiments verify the correctness and accuracy of the models. It is significant in theory and practical application for realizing IGBT junction temperature monitoring on-line and improving the reliability of IGBT module and power electronic equipment.关键词
载流子浓度/迁移率/电压变化率/结温预测模型Key words
carrier concentration/carrier mobility/rate of voltage change/prediction model of junction temperature引用本文复制引用
刘宾礼,唐勇,罗毅飞,刘德志,王瑞田,汪波..基于电压变化率的IGBT结温预测模型研究[J].物理学报,2014,(17):1-10,10.基金项目
国家自然科学基金面上项目(批准号:51277178)、国家重点基础研究发展计划973项目(批准号:2013CB035601)和国家优秀青年基金(批准号:51307176)资助的课题 （批准号:51277178）
