物理学报Issue(17)：1-6,6.DOI:10.7498/aps.63.177401
Mg掺杂n型Sn基VIII型单晶笼合物的结构及电传输特性
Structural and electrical transp ort prop erties of Mg-dop ed n-typ e Sn-based typ e VIII single crystalline clathrate
摘要
Abstract
Mg-doped Sn-based single crystalline samples Ba8Ga16-XMgXSn30(0 6 X 6 1.5) were grown from Sn flux to characterize their structural and electrical transport properties. Research results show that the prepared compounds are well indexed by the type-VIII clathrate structure with a space group I¯43m. With the increase in Mg content, the melting point of the corresponding compounds increases. On the contrary, the lattice constant decreases. The actual content of filling atomic Ba in doped samples is below the ideal value of 8.0, the occupancy of Ba in the dodecahedron is about 0.93 for the sample with X =1.5. All the samples show n-type conduction. The Mg atoms have an effect on the band structure of the materials, and the carrier concentrations in the doped samples are reduced. However, the absolute values of Seebeck coefficient and the resistivity of doped compounds increase, respectively. By calculation, the sample of X =1.5 obtains the maximum value of power factor 1.26 × 10-3 W·m-1·K-2 near 430 K.关键词
VIII型笼合物/n型传导/单晶Key words
VIII-type clathrate/n-type conduction/single crystalline引用本文复制引用
孟代仪,申兰先,李德聪,晒旭霞,邓书康..Mg掺杂n型Sn基VIII型单晶笼合物的结构及电传输特性[J].物理学报,2014,(17):1-6,6.基金项目
国家自然科学基金研究项目(批准号:51262032)资助的课题 （批准号:51262032）
