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忆阻元件与RLC以及二极管串并联电路的特性研究

王天舒 张瑞德 关哲 巴柯 俎云霄

物理学报Issue(17):1-8,8.
物理学报Issue(17):1-8,8.DOI:10.7498/aps.63.178101

忆阻元件与RLC以及二极管串并联电路的特性研究

Properties of memristor in RLC circuit and diode circuit

王天舒 1张瑞德 1关哲 1巴柯 1俎云霄1

作者信息

  • 1. 北京邮电大学电子工程学院,北京 100876
  • 折叠

摘要

Abstract

The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model’s parameters on the circuits’ properties, simulations are made for the two mathematical models. The model’s parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.

关键词

忆阻元件/RLC电路/二极管/数学模型

Key words

memristor/RLC circuit/diode circuit/mathematic model

引用本文复制引用

王天舒,张瑞德,关哲,巴柯,俎云霄..忆阻元件与RLC以及二极管串并联电路的特性研究[J].物理学报,2014,(17):1-8,8.

基金项目

北京邮电大学大学生研究创新基金资助的课题 ()

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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