物理学报Issue(17)：1-8,8.DOI:10.7498/aps.63.178501
隧道场效应晶体管静电放电冲击特性研究
Research on electrostatic discharge characteristics of tunnel field effect transistors
摘要
Abstract
Power consumption has been the major bottleneck in the development of integrated circuits with reduced criti-cal dimensions and improved integrated level. Tunnel field effect transistor (TFET) has been investigated as one of the promising replacements for traditional metal oxide semiconductor field effect transistor (MOSFET), owing to the introduction of band to band tunneling (BTBT) mechanism based on which a smaller subthreshold slope is achieved. However, a thinner oxide layer and a shorter channel length in TFET may induce localization of high current density, high electrical field distribution, and generation of heat, which abate the probability to survive electrostatic discharge (ESD). Besides, the novel BTBT operating principles also present a challenge to TFET ESD protection design. In this paper transmission line pulse test method is adopted to analyze the working principle of conventional TFET at onset, holding, discharge, and second breakdown during an ESD event. Based on these a new TFET ESD device protection design is proposed and characterized with a deeply doped n+ pocket near the source region beneath the gate, which can make effective adjustments of contact potential barrier, reduce tunneling junction width, thus better ESD design windows are obtained.关键词
隧道场效应晶体管(TFET)/静电放电(ESD)/传输线脉冲(TLP)/带带隧穿机理Key words
tunnel field Effect transistor (TFET)/electrostatic discharge (ESD)/transmission line pulse (TLP)/band-to-band tunneling引用本文复制引用
王源,张立忠,曹健,陆光易,贾嵩,张兴..隧道场效应晶体管静电放电冲击特性研究[J].物理学报,2014,(17):1-8,8.基金项目
国家自然科学基金青年科学基金(批准号:61106101)资助的课题 （批准号:61106101）
