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N2-H2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

郝莹莹 孟秀兰 姚福宝 赵国明 王敬 张连珠

物理学报Issue(18):1-10,10.
物理学报Issue(18):1-10,10.DOI:10.7498/aps.63.185205

N2-H2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

Simulations of electrical asymmetry effect on N2-H2 capacitively coupled plasma by particle-in-cell/Monte Carlo mo del

郝莹莹 1孟秀兰 1姚福宝 1赵国明 1王敬 1张连珠1

作者信息

  • 1. 河北师范大学物理科学与信息工程学院,石家庄 050024
  • 折叠

摘要

Abstract

A N2-H2 capacitively coupled rf discharge has potential applications in etching of organic low dielectric constant (low-k) material for microelectronics technology. In this paper, we investigate the characteristic and electrical asymmetry effect (EAE) on the N2-H2 capacitively coupled plasma used for low-k material etching by particle-in-cell/Monte Carlo (PIC/MC) model, in which the two frequency sources of 13.56 MHz and 27.12 MHz are applied separately to the two electrodes in geometrically in symmetry. It is found that the plasma density profiles, the ion flux density profiles and the energy distribution of ion bombarding electrodes can be changed by adjusting the phase angle θ between the two harmonics. When the phase angle θ is 0◦, the density of primary ion (H+3 ) near low frequencie electrode (LFE) (wafer) is smallest, whereas flux and average energy of ion (H+, H+3 , H+2 ) bombarding LFE are biggest; if the phase angle θ is tuned from 0◦ to 90◦, the dc self-bias increases almost linearly from -103 V to 106 V, ion flux bombarding the LFE decreases by ±18%, the maximum of the ion bombarding energy at the LFE decreases by a factor of 2.5. For the N2-H2 capacitively coupled rf discharge, for the case of two frequencies (13.56 MHz/27.12 MHz) applied separately to the two electrodes, can realize separate control of ion energy and flux via the EAE, and is generally in qualitative agreement with experimental and modeling investigation on the Ar and O2 plasma for a dual-frequency voltage source of 13.56 MHz and 27.12 MHz is applied to the powered electrode. This work supplies a references basis for experimental research and technology that the EAE on the H2-N2 plasmas is used for organic low-k material etching process.

关键词

H2-N2等离子体/电非对称效应/particle-in-cell/Monte Carlo模型

Key words

H2-N2 plasmas/electrical asymmetry effect/particle-in-cell/Monte Carlo model

引用本文复制引用

郝莹莹,孟秀兰,姚福宝,赵国明,王敬,张连珠..N2-H2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟[J].物理学报,2014,(18):1-10,10.

基金项目

Project supported by the Hebei Natural Science Foundation of China (Grant No. A2012205072) (Grant No. A2012205072)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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