物理学报Issue(18)：1-11,11.DOI:10.7498/aps.63.185207
高压耦合高功率脉冲磁控溅射的增强放电效应
Enhanced discharge of high p ower pulsed magnetron sputtering coupling with high voltage
摘要
Abstract
Plasma source ion implantation and deposition, as an effective technology to produce functional coatings with high adhesion and density, possesses the wide application prospect, especially in the deposition of coatings that work in high loading service conditions. The key component of this technology is the metal plasma source, which is now based on pulsed cathodic arc with complex source structure and magnetic filtration because of the “macro-droplets” in the ion flux. In this paper, we present another metal plasma source, high power pulsed magnetron sputtering (HPPMS), and investigate the discharge characteristics at different coupling high-voltages by optical emission spectroscopy. The results show that significant improvements are found in the discharge target current and main particles in the plasma. The improvement in gas discharge by the coupling high-voltage is greater than in metal discharge which could increase obviously in the self-sputtering stage with higher target voltage discharge. Last but not least, in this paper we discuss the discharge enhancing mechanism of coupling high-voltage. It is found that the self-excited glow discharge of coupling high-voltage, the hollow-cathodic effect induced by face-to-face negative voltages of HPPMS and coupling high-voltage, and the enhanced ambipolar diffusion of the coupling high-voltage can all play a considerable role in HPPMS discharge.关键词
高功率脉冲磁控溅射/耦合高压/放电靶电流/等离子体发射光谱Key words
high power pulsed magnetron sputtering/coupling high-voltage/discharge target current/plasma optical emission spectroscopy引用本文复制引用
吴忠振,田修波,潘锋,RickyK.Y.Fu,朱剑豪..高压耦合高功率脉冲磁控溅射的增强放电效应[J].物理学报,2014,(18):1-11,11.基金项目
国家自然科学基金(批准号:51301004, U1330110)和深圳市科技计划(批准号：SGLH20120928095706623, JCYJ-20120614150338154, CXZZ20120829172325895)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.51301004, U1330110) and the Shen-zhen Science and Technology Research Grant, China (Grant Nos. SGLH20120928095706623, JCYJ20120614150338154, CXZZ20120829172325895) （批准号:51301004, U1330110）
