物理学报Issue(18)：1-9,9.DOI:10.7498/aps.63.187301
忆阻器及其阻变机理研究进展
Research progress of memristors and memristive mechanism
摘要
Abstract
Memristors are the fourth basic circuit element in addition to the three classical elements: resistor, capacitor, and inductor, which have great application prospects in the fields of information storage, logic operations and neuromorphic networks. The recent development of memristors and memristive mechanism is reviewed, including connotations and characteristics of memristors, memristive mechanism, types of memristive mateirals, and application prospects of mem-ristors. Finally, the key problems and development proposals are presented and a prospect on the development trend is also given.关键词
忆阻器/阻变机理/电阻开关/忆阻器材料Key words
memristors/memristive mechanism/resistive switching/memristive materials引用本文复制引用
刘东青,程海峰,朱玄,王楠楠,张朝阳..忆阻器及其阻变机理研究进展[J].物理学报,2014,(18):1-9,9.基金项目
国家自然科学基金(批准号:21203248)和湖南省高校科技创新团队支持计划资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.21203248) and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province （批准号:21203248）
