物理学报Issue(18)：1-7,7.DOI:10.7498/aps.63.188101
质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响
Effect of irradiation damage on the dark electric prop erties of single junction GaAs/Ge solar cells
摘要
Abstract
In this paper, the dark electrical properties are studied by measuring the dark current-voltage characteristics of a type of domestic single-junction (SJ) GaAs/Ge solar cell after proton irradiation. Using a double exponential mode for the dark electrical properties of p-n junction, the dark I-V curves of the proton-irradiated SJ cells are mathematically fitted, and there are four kinds of typical parameters, namely serious resistance (Rs), parallel resistance (Rsh), diffusion current (Is1), and recombination current (Is2), which are determined to characterize the irradiation effects. Hence, four parameters such as Rs, Rsh, Is1andIs2 are significantly changed after proton irradiation, where Rs, Rsh, Is1 increase while Rsh decreases with increasing the displacement damage dose. In addition, Rs increases with displacement damage dose, which is unrelated to proton energies. Theoretical analysis indicates that the above-mentioned changes of the parameters result from the damage distributions in different regions of the solar cells. Irradiation-induced damage in the base and emitter regions of the cells could induce Rs and Is1 to augment, while junction-region damage causes the Rsh to decrease but the Is2 to increase.关键词
砷化镓太阳电池/质子辐射/暗特性/数值拟合Key words
GaAs/Ge solar cells/proton irradiation/dark electric properties/numerical fitting引用本文复制引用
岳龙,吴宜勇,张延清,胡建民,孙承月,郝明明,兰慕杰..质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响[J].物理学报,2014,(18):1-7,7.基金项目
国防科工局技术基础科研项目(批准号：Z1620120003)、工业和信息化部电子第五研究所发展基金青年计划专项(批准号:13F06)和工业和信息化部电子第五研究所所发展C类项目(批准号:13C05)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No. Z1620120003), the Youth Foundation of The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, China (Grant No.13F06) and Class C (Grant No.13C05) （批准号：Z1620120003）
