物理学报Issue(19)：1-6,6.DOI:10.7498/aps.63.194205
毫秒脉冲激光辐照硅基PIN的温度场应力场数值分析
Numerical simulation of thermal and stress field in silicon-based p ositive-intrinsic-negative photo dio de irradiated by millisecond-pulsed laser
魏智 1金光勇 1彭博 1张喜和 1谭勇1
作者信息
摘要
Abstract
In order to study the thermal and stress fields in the multilayered structure of silicon-based positive-intrinsic-negative(PIN) photodiode irradiated by millisecond(ms)-pulsed laser, we use the thermal elasto-plastic constitutive theory and the equivalent specific heat method, to deal with the phase change latent heat. The multiple-heat-source, especially the influence of reflection from bottom-aluminum-electrode, and the effect of the nonlinearity of material parameters are taken into consideration. A 2-D simulation model is built by means of the finite element simulation software of COMSOL Multiphysics. The surface and the internal each layer showing changes of the transient distribution and evolution of the thermal and stress fields with space and time can be obtained. Because of taking account of the reflection of the aluminum electrode, the temperature of the aluminum electrode rises slightly. On this basis, we analyze the hard failure mechanism of ms-pulsed laser irradiated silicon-based PIN, and the mechanical damage before melting that leads to a malfunction of silicon-based PIN detector.关键词
毫秒脉冲激光/热应力/相变潜热/多层结构Key words
millisecond pulse laser/thermal stress/phase change latent heat/multilayered structure引用本文复制引用
魏智,金光勇,彭博,张喜和,谭勇..毫秒脉冲激光辐照硅基PIN的温度场应力场数值分析[J].物理学报,2014,(19):1-6,6.
