物理学报Issue(23)：1-8,8.DOI:10.7498/aps.63.236102
γ射线总剂量辐照效应对应变Si p型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究∗
Study on the influence of γ-ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor
摘要
Abstract
In this work, the carrier microscopic transport process of biaxial strained Si p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) underγ-ray radiation has been studied. Effect ofγ-ray on devices and the relationship between the variation of device electrical characteristics and the total dose are investigated. A model for considering the degradation of threshold voltage and transconductance due to the total dose radiation is established. Based on this model, numerical simulation has been carried out. Results show that the threshold voltage of PMOSFET decreases with increasing radiation dose. At a lower total dose, the threshold voltage decreases linearly. However, at a higher total dose, it becomes saturated. The degradation can be explained by the generation of trapped charges which increase the impact possibility of carriers in the channel and induce the reduction of mobility and transconductance accordingly. Finally, the simulation results are compared with the experimental data. A good agreement is observed, indicating the validation of our proposed model.关键词
应变Sip型金属氧化物半导体场效应晶体管/总剂量辐照/阈值电压/跨导Key words
strained Si p-channel metal-oxide-semiconductor field-effect transistor/total dose irradiation/threshold voltage/transconductance引用本文复制引用
胡辉勇,刘翔宇,连永昌,张鹤鸣,宋建军,宣荣喜,舒斌..γ射线总剂量辐照效应对应变Si p型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究∗[J].物理学报,2014,(23):1-8,8.基金项目
教育部博士点基金(批准号：JY0300122503)和中央高等学校基本科研基金(批准号：K5051225014, K5051225004)资助的课题.* Project supported by the Doctoral Foundation of Ministry of Education, China (Grant No. JY0300122503) and the Funda-mental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004) （批准号：JY0300122503）
