物理学报Issue(23)：1-8,8.DOI:10.7498/aps.63.237305
具有L型源极场板的双槽绝缘体上硅高压器件新结构∗
A dual-trench silicon on insulator high voltage device with an L-shap ed source field plate
摘要
Abstract
To improve the breakdown voltage and reduce the specific on-resistance of a small size silicon on insulator (SOI) device, a dual-trench SOI high voltage device with an L-shaped source field plate is proposed. The device has the features as follows: first, a trench gate is adopted. The trench gate widens the current conduction area and makes the current conduction path shorter, thus lowering the specific on-resistance. Second, a SiO2 dielectric layer is introduced into the drift region. This dielectric layer can hold a high electric field, which makes the breakdown voltage greatly increased. Third, an L-shaped source field plate is introduced. This field plate modulates the electric field in the drift region, so increases the optimized doping concentration of the drift region significantly and reduces the specific on-resistance. The results from the two-dimensional semiconductor simulator show that as compared with a conventional SOI device at the same cell pitch, the breakdown voltage is increased by 151%, and the specific on-resistance is reduced by 20%. The specific on-resistance is reduced by 80%at the same breakdown voltage. Compared with a dual-trench SOI device with the same cell pitch, the proposed device maintains the same high breakdown voltage as the dual-trench SOI device, and at the same time, the specific on-resistance is decreased by 26%.关键词
绝缘体上硅/槽栅/比导通电阻/击穿电压Key words
silicon on insulator/trench gate/specific on-resistance/breakdown voltage引用本文复制引用
石艳梅,刘继芝,姚素英,丁燕红,张卫华,代红丽..具有L型源极场板的双槽绝缘体上硅高压器件新结构∗[J].物理学报,2014,(23):1-8,8.基金项目
国家自然科学基金(批准号:51101113)和天津市自然科学基金(批准号:13JCQNJC,14JCYBJC16200)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.51101113) and the Natural Science Foundation of Tianjin, China (Grant Nos.13JCQNJC,14JCYBJC16200) （批准号:51101113）
