物理学报Issue(23)：1-6,6.DOI:10.7498/aps.63.238501
应变（001）p型金属氧化物半导体反型层空穴量子化与电导率有效质量∗
Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor
摘要
Abstract
Within the framework of k·p perturbation theory, models of the hole quantization and conductivity effective mass for the inversion layer in uniaxially tensile/compressive and Si-based baixially strained p-channel metal-oxid-semiconductor (PMOS) have been established. Results show that: 1) uniaxially compressive technique should be chosen for the carrier mobility enhancement in uniaxially strained PMOS; 2) the magnitude of uniaxial stress will be less than that of the biaxial case to improve PMOS performance using strained technique; 3) strained Si1−xGex is preferred to use instead of using strained Si, when we choose the biaxially strained materials for the PMOS channel. Our results can provide valuable references to Si-based and other strained device and materials design.关键词
应变/p型金属氧化物半导体/沟道/设计Key words
strain/p-channel metal-oxid-semiconductor/channel/design引用本文复制引用
刘伟峰,宋建军..应变（001）p型金属氧化物半导体反型层空穴量子化与电导率有效质量∗[J].物理学报,2014,(23):1-6,6.基金项目
教育部博士点基金(批准号：JY0300122503)和陕西省自然科学基础研究计划(批准号:2014JQ8329)资助的课题.* Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503) and the Natural Science Basic Research Plan of Shaanxi Province, China (Grant No.2014JQ8329) （批准号：JY0300122503）
