物理学报Issue(24)：1-6,6.DOI:10.7498/aps.63.248102
InGaAsSb四元合金材料禁带宽度的计算方法∗
Calculation metho ds of InGaAsSb quaternary alloy band gap
摘要
Abstract
Two popular interpolation formulas of calculating InGaAsSb quaternary alloy band gap energy are discussed, and the calculation results from them are presented and compared. It is found, after the two formulas have been converted into equivalent formulas in the same forms, that in them there is taken into consideration only the influence of bowing parameter in theΓ valley. In this paper, the effect of the spin-orbit splitting on the valence band is considered, and a new method of calculating the InGaAsSb band gap is proposed by introducing the bowing parameter of spin-orbit splitting. The results show that the introduction of the bowing parameter of spin-orbit splitting can improve the accuracy of the calculation results compared with the above two methods. When the fraction of In is less than 0.72, the calculation obtained from our method is most accurate.关键词
InGaAsSb/禁带宽度/弯曲因子Key words
InGaAsSb/band gap/bowing parameter引用本文复制引用
刘超,魏志鹏,安宁,何斌太,刘鹏程,刘国军..InGaAsSb四元合金材料禁带宽度的计算方法∗[J].物理学报,2014,(24):1-6,6.基金项目
国家自然科学基金(批准号:61076039,61204065,61205193,61307045)、高等学校博士学科点专项科研基金(批准号:20112216120005)、吉林省科技发展计划(批准号:20121816,201201116)和高功率半导体激光国家重点实验室基金(批准号:9140C310101120C031115)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China (Grant Nos.61076039,61204065,61205193,61307045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20112216120005), the Developing Project of Science and Technology of Jilin Province, China (Grant Nos.20121816,201201116), and the National Key Laboratory of High-Power Semiconductor Lasers Foundation, China (Grant No.9140C310101120C031115) （批准号:61076039,61204065,61205193,61307045）
