物理学报Issue(24)：1-7,7.DOI:10.7498/aps.63.248105
基于微芯片的透射电子显微镜的低温纳米精度电子束刻蚀与原位电学输运性质测量∗
Nano-scale lithography and in-situ electrical measurements based on the micro-chips in a transmission electron microscop e
摘要
Abstract
In this paper, the in-situ membrane chips with the electrodes are fabricated with the micro-chip technique. Using a home-made in-situ holder, the fine lithography on the InAs nanowires is demonstrated by the focused electron beam at low temperature in a transmission electron microscope. It is found that the conductance of the nanowires decreases linearly with the cross section area decreasing from bigger than 10000 nm2 down to 800 nm2 by lithography. With this lithography at low temperature, a 10 nm nano-dot is fabricated on an InAs nanowire, and its electrical properties are measured at 77 and 300 K. The coulomb blockade effect is observed at 77 K due to the electron tunneling, while this phenomenon disappears at 300 K due to the stronger thermal fluctuation.关键词
低温电子束刻蚀/原位透射电子显微镜电学测量/InAs纳米线/库仑阻塞效应Key words
low temperature electron beam lithography/in-situ transmission electron microscope electrical measurements/InAs nanowire/Coulomb blockade effect引用本文复制引用
张超,方粮,隋兵才,徐强,王慧..基于微芯片的透射电子显微镜的低温纳米精度电子束刻蚀与原位电学输运性质测量∗[J].物理学报,2014,(24):1-7,7.基金项目
国家自然科学基金(批准号:61106084,61332003)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China (Grant Nos.61106084,61332003) （批准号:61106084,61332003）
