物理学报Issue(24)：1-6,6.DOI:10.7498/aps.63.248502
堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管二维模型∗
Two-dimensional mo del of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric
摘要
Abstract
In this paper, a novel symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect tran-sistor with gate stack dielectric is proposed. The two-dimensional Poisson’s equation is solved under suitable boundary condition by applying the parabolic potential approximation. This analytical model for the surface potential and the threshold voltage is derived. The strained Si channel is divided into two different doping regions, and the surface po-tential along the channel, compared with the normal double-gate device (uniform doping channel), exhibits a stepped potential variation, which can increase carrier transport speed. The influence of drain-source voltage on short channel effects (SCEs) is discussed. it is shown that threshold voltage decreases with Ge mole fraction increasing in butter layer, increases with the increase of the high-k layer dielectric permittivity of gate stack, and increases with the increase of doping concentration in the channel near the source, of which the physical mechanisms are analyzed and explained. Results show that the novel device can suppress threshold voltage drift and SCEs, which provides the basic guidance for designing the CMOS-based devices in nanometer scale.关键词
应变Si/单Halo/对称双栅/金属氧化物半导体场效应管Key words
strained Si/single Halo/symmetrical double-gate/metal-oxide semiconductor field effect transistor引用本文复制引用
辛艳辉,刘红侠,王树龙,范小娇..堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管二维模型∗[J].物理学报,2014,(24):1-6,6.基金项目
国家自然科学基金(批准号:61376099,11235008)和高等学校博士学科点专项科研基金(批准号:20130203130002,20110203110012)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China (Grant Nos.61376099,11235008) and the Special-ized Research Fund for the Doctoral Program of Higher Education, China (Grant Nos.20130203130002,20110203110012) （批准号:61376099,11235008）
