物理学报Issue(1)：1-7,7.DOI:10.7498/aps.64.016103
应用于相变存储器的Cu-Ge3Sb2Te5薄膜的结构及相变特性研究∗
Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory
摘要
Abstract
The Cu-Ge3Sb2Te5 thin films with different Cu contents were prepared by magnetron sputtering method. The de-pendence of film resistance on temperature is measured in situ by using the four-point probe heating platform. The crystal structure, microstructure, optical gap, and bond states of the Cu-Ge3Sb2Te5 films are investigated by X-ray diffraction, transmission electron microscopy, transmission and Raman spectra, respectively. It is shown that the crystallization temperature and activation energy of crystallization increase with increasing Cu content, suggesting the improvement in thermal stability and data retention ability, while optical gap decreases with increasing Cu concentration. It is observed that the Raman peak shifts from 129 cm−1 to 127 cm−1, which may be ascribed to the vibration of polar Cu—Te bonds. The Cu-Ge3Sb2Te5 crystallizes into the embedded Cu2Te and Ge2Sb2Te5 phases with evenly grown grains.关键词
薄膜/相变/结构Key words
thin film/phase change/structure引用本文复制引用
孙景阳,王东明,吕业刚,王苗,汪伊曼,沈祥,王国祥,戴世勋..应用于相变存储器的Cu-Ge3Sb2Te5薄膜的结构及相变特性研究∗[J].物理学报,2015,(1):1-7,7.基金项目
国家自然科学基金(批准号:61306147,61377061)、宁波市自然科学基金(批准号:2014A610121)和宁波大学王宽城幸福基金资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.61306147,61377061), the National Natural Science Foundation of Ningbo (Grant No.2014A610121), and the Magna Fund in Ningbo University sponsored by K. C. Wong （批准号:61306147,61377061）
