物理学报Issue(1)：1-5,5.DOI:10.7498/aps.64.017102
硅基二氧化钒相变薄膜电学特性研究∗
Researches on the electrical prop erties of vanadium oxide thin films on Si substrates
摘要
Abstract
Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.关键词
二氧化钒/电致相变/硅基片/氧化铝Key words
vanadium dioxide/electrically-driven metal-insulator transition/silicon substrate/aluminium oxide引用本文复制引用
熊瑛,岐业,田伟,毛淇,陈智,杨青慧,荆玉兰..硅基二氧化钒相变薄膜电学特性研究∗[J].物理学报,2015,(1):1-5,5.基金项目
国家自然科学基金重点项目(批准号:61131005),教育部科学技术研究重大项目(批准号:313013),国家高技术研究发展计划(批准号:2011AA010204),教育部新世纪优秀人才资助计划(批准号：NCET-11-0068),四川省杰出青年学术技术带头人计划(批准号:2011JQ0001),高校博士点专项科研基金(批准号:20110185130002)资助的课题.* This work is financially supported by National Nature Science Foundation of China (Grant No.61131005), Keygrant Project of Chinese Ministry of Education (Grant No.313013), National High-tech Research and Development Projects (Grant No.2011AA010204), New Century Excellent Talent Foundation (Grant No. NCET-11-0068), Sichuan Youth S T foundation (Grant No.2011JQ0001), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No.20110185130002) （批准号:61131005）
