物理学报Issue(1)：1-7,7.DOI:10.7498/aps.64.018501
光致电化学法提高垂直结构发光二极管出光效率的研究∗
Increase in light extraction efficiency of vertical light emitting dio des by a photo-electro-chemical etching metho d
摘要
Abstract
The rate of photo-electro-chemical (PEC) etching on N-polar n-GaN using vertical light emitting diodes (V-LEDs) has been investigated in detail, by varying the etching parameters (etchant concentration, etching duration and light intensity). V-LED with optimal hexagonal pyramid structure (the side-wall angle is 31◦) has been fabricated, and then the influence of the PEC etching on the electrical and optical properties of V-LED has been analyzed. After PEC etching, the sample has good ohmic contact with the electrode and has lower contact resistance than a reference sample. The electrical characteristics have a better improvement. And the light output power has improved obviously after PEC etching, which shows 86.1%enhancement at 20 mA. Effect of side-wall angle of the pyramids on light extraction efficiency (LEE) in V-LEDs is theoretically calculated by finite difference time domain (FDTD) method. Simulation results show that the LEE is significantly increased for the sidewall angle between 20◦ and 40◦, and the maximum enhancement is realized at a side-wall angle of 23.6◦ (the total reflection angle at the GaN/air interface).关键词
刻蚀/光致电化学法/n-GaN/出光效率Key words
etch/photo-electro-chemical method/n-GaN/light extraction efficiency引用本文复制引用
弓志娜,冯仑刚,王江腾,云峰,丁文,张烨,郭茂峰,刘硕,黄亚平,刘浩,王帅..光致电化学法提高垂直结构发光二极管出光效率的研究∗[J].物理学报,2015,(1):1-7,7.基金项目
国家高技术研究发展计划(批准号:2014AA032608)和西安交通大学金属材料国家重点实验室开放课题(批准号:20121201)资助的课题.* Project supported by the National High Technology Research and Development Program of China (Grant No.2014AA032608), and the Xi’an Jiaotong University State Key Laboratory for Mechanical Behavior of Material open project, China (Project No.20121201) （批准号:2014AA032608）
