物理学报Issue(2)：1-7,7.DOI:10.7498/aps.64.024220
质子辐照导致科学级电荷耦合器件电离效应和位移效应分析∗
Analysis of ionizing and department damage mechanism in proton-irradiation-induced scientific charge-coupled device
摘要
Abstract
A sort of homemade buried scientific charge-coupled device (CCD) is injected by 10 MeV protons, and measurements are carried out primarily on change of dark signal, charge transfer efficiency. Results show that parameters of CCD presented significantly decrease. Post-irradiation annealing is implemented and the results revel that CCD parameters recover to different extents. In this paper, analysed are the mechanism for the decrease of CCD parameters, and their dependences on process and structure in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.关键词
电荷耦合器件/质子辐照/电离效应/位移损伤Key words
charge-coupled devices/proton irradiation/total ionizing dose/department damage引用本文复制引用
文林,李豫东,郭旗,任迪远,汪波,玛丽娅..质子辐照导致科学级电荷耦合器件电离效应和位移效应分析∗[J].物理学报,2015,(2):1-7,7.基金项目
国家自然科学基金(批准号:11005152)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China (Grant No.11005152) （批准号:11005152）
