物理学报Issue(2)：1-8,8.DOI:10.7498/aps.64.028101
高质量高取向（100）面金刚石膜的可控性生长∗
Preparation of the high-quality highly (100) oriented diamond films with controllable growth
摘要
Abstract
The high-quality highly (100) oriented diamond films each with controllable surface morphology, quality, orientation, and growth rate are prepared at low pressure by microwave plasma chemical vapor deposition. The results show that there is a coupled effect between substrate temperature and methane concentration on the growth of (100) oriented diamond films. The substrate temperature should be increased with increasing the methane concentration in order to obtain similar surface morphologies. When the methane concentration is 3.0%, the results indicate that there are five states for the orientation change with the substrate temperature increasing from 740 ◦C to 1100 ◦C, and the diamond films with (100) orientation can be deposited at the substrate temperatures ranging from 860 ◦C to 930 ◦C. Moreover, the quality and growth rate of each of (100) oriented diamond films are proportional to the substrate temperature and methane concentration, respectively. In order to obtain the high-quality highly (100) oriented diamond films, the substrate temperature and methane concentration should be both appropriate.关键词
金刚石膜/化学气相沉积/取向/质量Key words
diamond film/chemical vapor deposition/orientation/quality引用本文复制引用
刘聪,汪建华,翁俊..高质量高取向（100）面金刚石膜的可控性生长∗[J].物理学报,2015,(2):1-8,8.基金项目
国家自然科学基金(批准号:11175137)和武汉工程大学研究基金(批准号:11111051)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China (Grant No.11175137), and the the Research Fund of Wuhan Institute of Technology, China (Grant No.11111051) （批准号:11175137）
