物理学报Issue(4)：1-5,5.DOI:10.7498/aps.64.047202
金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究∗
Ro om-temp erature thermo electric prop erties of GaN thin films grown by metal organic chemical vap or dep osition
摘要
Abstract
The GaN thin films with different doping concentrations are grown by metal organic chemical vapor deposition. Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room temperature. The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical data. The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier concentration. The conductivity of GaN thin film increases with the increase of carrier concentration. The Seebeck coefficient of GaN thin film varies from 100 to 500 µV/K, depending on carrier concentration. The highest power factor is 4.72 × 10−4 W/mK2 when the carrier concentration is 1.60 × 1018 cm−3. The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon scattering. The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0.0025 when the carrier concentration is 1.60 × 1018 cm−3.关键词
GaN薄膜/热电性质Key words
GaN thin films/thermoelectric properties引用本文复制引用
王保柱,张秀清,张奥迪,周晓然,Bahadir Kucukgok,Na Lu,肖红领,王晓亮,Ian T. Ferguson..金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究∗[J].物理学报,2015,(4):1-5,5.基金项目
国家自然科学基金(批准号:61076052)和河北省自然科学基金(批准号：F2013208171)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.61076052) and the Natural Science Foundation of Hebei Province, China (Grant No. F2013208171) （批准号:61076052）
