物理学报Issue(4)：1-7,7.DOI:10.7498/aps.64.048402
嵌入Ag纳米颗粒层的DNA忆阻器∗
Organic memristive devices based on DNA emb edded in silver nanoparticles layer
摘要
Abstract
Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam-monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15−20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages (VSET, VRESET) and the on/off current ratio ION/IOFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.关键词
有机忆阻器/DNA生物聚合物/Ag纳米颗粒Key words
organic memristive device/DNA biopolymer/Ag nanoparticles引用本文复制引用
王媛,董瑞新,闫循领..嵌入Ag纳米颗粒层的DNA忆阻器∗[J].物理学报,2015,(4):1-7,7.基金项目
国家自然科学基金(批准号:11375081)和山东省自然科学基金(批准号：ZR2012FM026, ZR2012FL20)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.11375081) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2012FM026, ZR2012FL20) （批准号:11375081）
