物理学报Issue(5)：1-6,6.DOI:10.7498/aps.64.050701
InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征∗
Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting dio des using low-frequency current noise
摘要
Abstract
In this paper, we measure the emission transition mechanisms in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LED) using low-frequency current noise from 0.1 to 10 mA. According to the characteristics of the low-frequency current noise and the emission mechanisms of InGaN/GaN LEDs, we study the relationships between low-frequency current noise and current flows through the LEDs. Conclusions indicate that the low-frequency current noise is increased with the increasing current from 0.1 to 10 mA. With a lower current (I <1 mA), it is the generation-recombination noise that dominates in LEDs, and with a higher current (I >10 mA) it is the 1/f noise that dominates in LEDs, so there exists an emission transition mechanism in InGaN/GaN MQW LEDs between 0.1 and 10 mA, showing that the mechanism of the carrier recombination changes from non-radiative recombination to a stable fluctuation of carrier numbers. Conclusions of this paper provide an effective method to characterize the emission transition mechanisms, optimize the design of LED so as to improve the quantum efficiency for InGaN/GaN MQW LEDs.关键词
低频噪声/发光二极管/复合机理/发光效率Key words
low-frequency noise/light-emitting diode/recombination mechanism/emission effciency引用本文复制引用
王党会,许天旱,王荣,雒设计,姚婷珍..InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征∗[J].物理学报,2015,(5):1-6,6.基金项目
西安石油大学博士科研启动基金(批准号：Z14086)和陕西省教育厅基金(批准号:2013JK0894)资助的课题.@@@@* Project supported by Youth Science and Technology Innovation Fund of Xi’an Shiyou University (Grant No. Z14086), and the Scientific Research Program Funded by Shaanxi Provicial Education Department (Grant No.2013JK0894) （批准号：Z14086）
