物理学报Issue(6)：1-7,7.DOI:10.7498/aps.64.067305
单轴应变硅 N沟道金属氧化物半导体场效应晶体管电容特性模型∗
A mo del of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor
摘要
Abstract
The capacitance model is fundamental for the transient analysis, AC analysis and noise analysis of uniaxially strained Si MOSFET device and circuit. Firstly, the 16-differential capacitance model for uniaxially strained Si NMOSFET is developed. Secondly, the simulation results from that model match the experimental results well, which validates the accuracy of the model. Meanwhile the simulated relations of key gate capacitance Cgg to stress intensity, bias voltage, channel length and concentration of poly gate are obtained and analyzed, showing that the value of Cgg is a little larger than that of strainless bulk device while the changing tendency keeps the same.关键词
单轴应变Si/微分电容/栅电容Key words
uniaxially strained Si/differential capacitance/gate capacitance引用本文复制引用
吕懿,张鹤鸣,胡辉勇,杨晋勇,殷树娟,周春宇..单轴应变硅 N沟道金属氧化物半导体场效应晶体管电容特性模型∗[J].物理学报,2015,(6):1-7,7.基金项目
教育部博士点基金(批准号:JY0300122503)和中央高校基本业务费(批准号:K5051225014, K5051225004)资助的课题.* Project supported by Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503) and Fundamental Research Funds for the Central Universities, China (Grant Nos. K5051225014, K5051225004) （批准号:JY0300122503）
