物理学报Issue(7)：1-9,9.DOI:10.7498/aps.64.077201
拓扑绝缘体（Bi0.5Sb0.5）2Te3薄膜中的线性磁阻
Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films
摘要
Abstract
Linear magnetoresistance (LMR) observed in a topological insulator (Bi0.5Sb0.5)2Te3 thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.关键词
拓扑绝缘体/薄膜/线性磁阻Key words
topological insulators/thin film/linear magnetoresistance引用本文复制引用
关童,滕静,吴克辉,李永庆..拓扑绝缘体（Bi0.5Sb0.5）2Te3薄膜中的线性磁阻[J].物理学报,2015,(7):1-9,9.基金项目
国家自然科学基金(批准号:91121003,11374337)、国家重点基础研究发展计划(973计划)(批准号:2012CB921703)和中国科学院资助的课题 （批准号:91121003,11374337）
