物理学报Issue(7)：1-7,7.DOI:10.7498/aps.64.077501
高质量稀磁半导体（Ga，Mn）Sb单晶薄膜分子束外延生长
Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films
摘要
Abstract
Diluted magnetic semiconductor (Ga, Mn)Sb and its related hetero-structures have attracted much attention in recent years since they are predicted to have some novel properties, such as the quantum anomalous Hall effect etc. However, it is not easy to grow high-quality (Ga, Mn)Sb films due to their narrow growth window. In this article, a series of 10 nm thick (Ga, Mn)Sb films with different Mn contents from 0.016 to 0.039 have been grown by molecular-beam epitaxy at low temperaturs (∼230 ◦C). The films have high crystalline quality as confirmed by in situ reflection high-energy electron diffraction and ex situ atomic force microscopy, and no MnSb phase could be observed. Curie temperature up to 30 K has been obtained in one (Ga, Mn)Sb film after post-growth thermal annealing. The magneto-resistance and anomalous Hall effect of this film have also been investigated at different temperatures.关键词
稀磁半导体/磁学性质/输运性质/分子束外延Key words
dilute magnetic semiconductor/magnetic properties/magneto-transport properties/molecular-beam epitaxy引用本文复制引用
祝梦遥,鲁军,马佳淋,李利霞,王海龙,潘东,赵建华..高质量稀磁半导体（Ga，Mn）Sb单晶薄膜分子束外延生长[J].物理学报,2015,(7):1-7,7.基金项目
国家重点科学研究发展计划项目(批准号:2015CB921503)和国家自然科学基金重点项目(批准号:61334006)资助的课题 （批准号:2015CB921503）
