物理学报Issue(13)：1-8,8.DOI:10.7498/aps.64.136103
电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性
Radiation damage effect and p ost-annealing treatments of NPN-input bip olar op erational amplifier in electron radiation environment
姜柯 1陆妩 2胡天乐 3王信 1郭旗 2何承发 1刘默涵 2李小龙3
作者信息
- 1. 中国科学院新疆理化技术研究所，中国科学院特殊环境功能材料与器件重点实验室，乌鲁木齐 830011
- 2. 新疆电子信息材料与器件重点实验室，乌鲁木齐 830011
- 3. 中国科学院大学，北京 100049
- 折叠
摘要
Abstract
With the rapid development of the space technology, operational amplifier is widely used as the basic liner circuit in a satellite system. There are many charged particles trapped in the earth’s magnetosphere, most of the particles are protons and electrons. In BJTs, the damage caused by electrons causes both bulk recombination and surface recombination to increase and subsequently current gain to decrease. Transistor gain degradation is the primary cause of parametric shifts and functional failures in linear bipolar circuits. The severity of electron radiation response correlates with electron’s energy and flux, therefore it is important to understand the electron radiation response in different conditions. In this paper, the tested devices used in this study are NPN-input bipolar operational amplifiers commercial-off-the-shelf (COTS) manufactured by Texas Instruments (TI). NPN-input bipolar operational amplifiers LM108 are irradiated with different energy and different beam current electrons respectively under different bias conditions to study the electron radiation damage effect. Experiment using 60Coγ-ray radiation is conducted to compare the different radiation damages between 60Co γ-ray and electron radiation. The total radiation experiments are carried out with the 60Coγ-ray source (Xinjiang Technical Institute of physics and chemistry). The radiation dose rates for the test samples are 1 Gy (Si)/s, and the total accumulated dose is 1000 Gy (Si). Subsequently, room temperature and high temperature annealings are conducted to analyze the parametric failure mechanism of LM108 caused by a total dose radiation for different biases. Result shows that 0.32 Gy(Si)/s beam current electrons can induce more damage than that caused by 1.53 Gy(Si)/s electrons with the same energy;1.8 MeV electrons can induce more damages than 1 MeV electrons with the same electron beam current because the former produces more displacement damage than the latter. Comparison between zero and forward biased devices shows that different biased devices have different radiation sensibility, and radiation produces more damages in zero biased devices than in forward biased devices with the same electron energy and beam current. This is because forward biased BJT will suppress the edge electric field, thus leading to the decrease of oxide-trapped charge and interface-trapped charge. During high-temperature annealing, degradation of the devices obviously can be recovered and almost return to the initial value finally. This result indicates that the 1.8 MeV and 1 MeV electron radiation mainly induces ionization damage in bipolar operational amplifier LM108.关键词
NPN输入双极运算放大器/电子辐射/辐射效应/退火Key words
NPN-input bipolar operational amplifier/electron radiation/radiation effect/annealing引用本文复制引用
姜柯,陆妩,胡天乐,王信,郭旗,何承发,刘默涵,李小龙..电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性[J].物理学报,2015,(13):1-8,8.
