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The influence of Fe doping on the surface topography of GaN epitaxial material

Cui Lei Yin Haibo Jiang Lijuan Wang Quan Feng Chun Xiao Hongling Wang Cuimei

半导体学报（英文版）2015，Vol.36Issue(10)：43-46,4.

半导体学报（英文版）2015，Vol.36Issue(10)：43-46,4.DOI:10.1088/1674-4926/36/10/103002

The influence of Fe doping on the surface topography of GaN epitaxial material

Cui Lei ¹Yin Haibo ¹Jiang Lijuan ¹Wang Quan ¹Feng Chun ²Xiao Hongling ¹Wang Cuimei¹

作者信息

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
2. School of Electronic Engineering, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
折叠

摘要

关键词

Fe doping/GaN/MOCVD/surface topography

Key words

Fe doping/GaN/MOCVD/surface topography

引用本文复制引用

Cui Lei,Yin Haibo,Jiang Lijuan,Wang Quan,Feng Chun,Xiao Hongling,Wang Cuimei..The influence of Fe doping on the surface topography of GaN epitaxial material[J].半导体学报（英文版）,2015,36(10):43-46,4.

基金项目

Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No.YYY-0701-02), the National Natural Science Foundation of China (Nos.61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project. （No.YYY-0701-02）

半导体学报（英文版）

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ISSN：1674-4926

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