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Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

Yi Mingdong Zhang Ning Xie Linghai Huang Wei

半导体学报(英文版)2015,Vol.36Issue(10):47-52,6.
半导体学报(英文版)2015,Vol.36Issue(10):47-52,6.DOI:10.1088/1674-4926/36/10/104001

Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

Yi Mingdong 1Zhang Ning 1Xie Linghai 1Huang Wei1

作者信息

  • 1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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摘要

关键词

organic field-effect transistors/heterojunction/ambipolar/contact resistance

Key words

organic field-effect transistors/heterojunction/ambipolar/contact resistance

引用本文复制引用

Yi Mingdong,Zhang Ning,Xie Linghai,Huang Wei..Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J].半导体学报(英文版),2015,36(10):47-52,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61475074, 61204095). (Nos.61475074, 61204095)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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