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Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure

Zheng Zhongxin Sun Jiandong Zhou Yu Zhang Zhipeng Qin Hua

半导体学报（英文版）2015，Vol.36Issue(10)：53-57,5.

半导体学报（英文版）2015，Vol.36Issue(10)：53-57,5.DOI:10.1088/1674-4926/36/10/104002

Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure

Zheng Zhongxin ¹Sun Jiandong ²Zhou Yu ¹Zhang Zhipeng ¹Qin Hua¹

作者信息

1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
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摘要

关键词

two-dimensional electron gas/hot electron/blackbody radiation/plasmon/Fabry-Pérot cavity

Key words

two-dimensional electron gas/hot electron/blackbody radiation/plasmon/Fabry-Pérot cavity

引用本文复制引用

Zheng Zhongxin,Sun Jiandong,Zhou Yu,Zhang Zhipeng,Qin Hua..Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure[J].半导体学报（英文版）,2015,36(10):53-57,5.

基金项目

Project supported by the National Basic Research Program of China (No.G2009CB929303), the National Natural Science Foundation of China (No.61271157), the China Postdoctoral Science Foundation (No.2014M551678), and the Jiangsu Planned Projects for Postdoctoral Research Funds (No.1301054B). （No.G2009CB929303）

半导体学报（英文版）

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ISSN：1674-4926

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