半导体学报（英文版）2015，Vol.36Issue(11)：25-29,5.DOI:10.1088/1674-4926/36/11/114001
Line-edge roughness induced single event transient variation in SOI FinFETs
Line-edge roughness induced single event transient variation in SOI FinFETs
Wu Weikang 1An Xia 1Jiang Xiaobo 1Chen Yehua 1Liu Jingjing 1Zhang Xing 1Huang Ru1
作者信息
- 1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University,Beijing 100871, China
- 折叠
摘要
关键词
heavy ion irradiation/single event transient/variation/line-edge roughness/SOI/FinFETKey words
heavy ion irradiation/single event transient/variation/line-edge roughness/SOI/FinFET引用本文复制引用
Wu Weikang,An Xia,Jiang Xiaobo,Chen Yehua,Liu Jingjing,Zhang Xing,Huang Ru..Line-edge roughness induced single event transient variation in SOI FinFETs[J].半导体学报（英文版）,2015,36(11):25-29,5.
