半导体学报（英文版）2015，Vol.36Issue(11)：53-57,5.DOI:10.1088/1674-4926/36/11/114007
Radiation effects on scientific CMOS image sensor
Radiation effects on scientific CMOS image sensor
Zhao Yuanfu 1Liu Liyan 1Liu Xiaohui 1Jin Xiaofeng 1Li Xiang1
作者信息
- 1. Beijing Microelectronics Technology Institute, Beijing 100076, China
- 折叠
摘要
关键词
CMOS image sensor (APS)/dark current/dark signal response non-uniformity/total dose effects/single event effectsKey words
CMOS image sensor (APS)/dark current/dark signal response non-uniformity/total dose effects/single event effects引用本文复制引用
Zhao Yuanfu,Liu Liyan,Liu Xiaohui,Jin Xiaofeng,Li Xiang..Radiation effects on scientific CMOS image sensor[J].半导体学报（英文版）,2015,36(11):53-57,5.
