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Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Zhao Yuanfu Zheng Hongchao Fan Long Yue Suge Chen Maoxin Du Shougang

半导体学报(英文版)2015,Vol.36Issue(11):58-62,5.
半导体学报(英文版)2015,Vol.36Issue(11):58-62,5.DOI:10.1088/1674-4926/36/11/114008

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Zhao Yuanfu 1Zheng Hongchao 1Fan Long 1Yue Suge 2Chen Maoxin 3Du Shougang1

作者信息

  • 1. Beijing Microelectronics Technology Institute, Beijing 100076, China
  • 2. Beijing Microelectronics Technology Institute, Beijing 100076, China
  • 3. Beijing University of Aeronautics & Astronautics, Beijing 100191, China
  • 折叠

摘要

关键词

microprocessor/transient dose rate effect/transient radiation effect

Key words

microprocessor/transient dose rate effect/transient radiation effect

引用本文复制引用

Zhao Yuanfu,Zheng Hongchao,Fan Long,Yue Suge,Chen Maoxin,Du Shougang..Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J].半导体学报(英文版),2015,36(11):58-62,5.

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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