半导体学报（英文版）2015，Vol.36Issue(11)：73-76,4.DOI:10.1088/1674-4926/36/11/115001
Analysis and RHBD technique of single event transients in PLLs
Analysis and RHBD technique of single event transients in PLLs
Han Zhiwei 1Wang Liang 1Yue Suge 2Han Bing 3Du Shougang1
作者信息
- 1. Beijing Microelectronics Technology Institute, Beijing 100076, China
- 2. Beijing Microelectronics Technology Institute, Beijing 100076, China
- 3. Beijing University of Aeronautics & Astronautics, Beijing 100191, China
- 折叠
摘要
关键词
phase locked loop (PLL)/radiation effect/single-event transient (SET)/radiation-hardening-by-design (RHBD)Key words
phase locked loop (PLL)/radiation effect/single-event transient (SET)/radiation-hardening-by-design (RHBD)引用本文复制引用
Han Zhiwei,Wang Liang,Yue Suge,Han Bing,Du Shougang..Analysis and RHBD technique of single event transients in PLLs[J].半导体学报（英文版）,2015,36(11):73-76,4.
