半导体学报（英文版）2015，Vol.36Issue(11)：116-120,5.DOI:10.1088/1674-4926/36/11/115010
Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
He Anlin 1Guo Gang 1Shi Shuting 1Shen Dongjun 1Liu Jiancheng 1Cai Li 1Fan Hui1
作者信息
- 1. China Institute of Atomic Energy, Beijing 102413, China
- 折叠
摘要
关键词
heavy ion/proton/DC/DC converter/single event effectsKey words
heavy ion/proton/DC/DC converter/single event effects引用本文复制引用
He Anlin,Guo Gang,Shi Shuting,Shen Dongjun,Liu Jiancheng,Cai Li,Fan Hui..Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J].半导体学报（英文版）,2015,36(11):116-120,5.
