表面技术2015，Vol.44Issue(11)：1-6,28,7.DOI:10.16490/j.cnki.issn.1001-3660.2015.11.001
多弧离子镀负偏压对氮化钛薄膜的影响
Influence of Negative Bias on TiN Film Deposited by Multi-arc Ion Plating
摘要
Abstract
Objective In order to improve the comprehensive performance of TiN coatings, the appropriate negative bias was in-vestigated. Methods TiN coatings were deposited with different negative bias voltage on the surface of 4Cr13 stainless steel, and the effect of negative bias voltage on the surface quality, microstructure, hardness, binding force and friction coefficient of the coa-tings was investigated. Results The results showed that negative bias voltage had an obvious influence on the surface quality of the TiN coating. When the negative bias voltage was 0 V, there were many droplets, larger particles and a few pits. With the increase of the bias voltage, the number and size of droplets on the film surface were reduced, and the coatings surface became smooth and more compact. TiN films deposited at different bias voltage all showed preferred orientation in (111) crystal plane, but with the increase of bias voltage, the preferred orientation gradually diminished, when the bias voltage was 400 V, the peak value of the film on the (220) crystal plane was gradually strengthened. When the bias voltage changed between 0 V and 400 V, the hardness, fording force and abrasion resistance of coatings first increased and then decreased. When the bias voltage was 300 V, the biggest hardness and fording force reached 2650HV and 58 N, respectively;The friction coefficient and abrasion loss were 0. 48 and 0. 1065 mm3 , respec-tively. Conclusion Applying proper negative bias voltage could improve the comprehensive properties of coatings, such as hardness, fording force and abrasion resistance. When the bias voltage was 300 V, the TiN film deposited showed the best properties.关键词
多弧离子镀/氮化钛/负偏压/耐磨性/结合力/硬度Key words
MAIP/TiN/negative bias voltage/wear resistance/fording force/hardness分类
矿业与冶金引用本文复制引用
宋沂泽,高原,董中新,张焱,彭凯,王成磊..多弧离子镀负偏压对氮化钛薄膜的影响[J].表面技术,2015,44(11):1-6,28,7.基金项目
国家自然科学基金资助项目(51264007) （51264007）
国家自然科学基金青年基金(51201043) （51201043）
广西科学研究与技术开发科技攻关计划(12118020-2-2-1) （12118020-2-2-1）
广西信息材料重点实验室(桂林电子科技大学)资助(1210908-10-Z) （桂林电子科技大学）
桂林电子科技大学-桂林电科院研究生联合培养基地专项经费资助(20121225-10-Z （）
20121225-03-Z) Supported by the National Natural Science Foundation of China (51264007), the National Natural Science Foundation of China (51201043 ),Guangxi Development of Science and Technology Research(12118020-2-2-1), Guangxi Key Laboratory of Information Materials (Guilin University of Electronic Tech-nology) (1210908-10-Z), and Guilin University of Electronic Technology-Electrical Science Graduate Student of Joint Training Base under Special Funding (20121225-10-Z, 20121225-03-Z) （51264007）
