传感技术学报2015，Vol.28Issue(9)：1315-1320,6.DOI:10.3969/j.issn.1004-1699.2015.09.009
基于MEMS工艺的SOI高温压力传感器设计
Design of SOI High Temperature Pressure Sensor Based on MEMS Process
摘要
Abstract
By using the process of diffusion,etching,oxidation,sputtering in MEMS(micro electro mechanical sys-tem)process,the SOI high temperature pressure sensor chip is prepared,and the vacuum chamber is formed be-tween the back of sensor chip with the glass through the electrostatic bonding process,finally the sensor chip and the peripheral equipment is connected through the wire bonding process. Test the packaged sensor chip under high temperature with high pressure,the test results shows that in the temperature range 21℃(at room temperature)to 300℃,the sensor chip can work normally in the pressure scale,the linearity of the sensor chip is decreased from 0.9 985 to 0.9 865,controlled in a small range. The performance test results under high temperature pressure shows that the pressure sensor can be used for pressure measurement in 300℃harsh environment,the stable performance under high temperature has provided reference for the development of piezoresistive pressure chip.关键词
高温压力传感器/压阻/敏感薄膜/SOI(绝缘体上硅)/MEMS(微机电系统)Key words
high temperature pressure sensor/piezoresistance/sensitive membrane/SOI(Silicon on Insulator)/MEMS(Micro Electro Mechanical System)分类
信息技术与安全科学引用本文复制引用
李丹丹,梁庭,李赛男,姚宗,熊继军..基于MEMS工艺的SOI高温压力传感器设计[J].传感技术学报,2015,28(9):1315-1320,6.基金项目
国家杰出青年科学基金项目(51425505) （51425505）
