电子学报Issue(8)：1549-1554,6.DOI:10.3969/j.issn.0372-2112.2013.08.015
电子倍增型GaAs光阴极实验研究
An Experimental Study on GaAs Photocathode with Electronic Multiplier
胡仓陆 1郭晖 2焦岗成 1彭岔霞 2冯驰 1徐晓兵 2周玉鉴 3成伟 1王书菲2
作者信息
- 1. 微光夜视技术重点实验室，陕西西安 710065
- 2. 北方夜视科技集团有限公司，云南昆明 650223
- 3. 西北工业大学材料学院，凝固技术国家重点实验室，陕西西安 710072
- 折叠
摘要
Abstract
GaAs photocathode with avalanche electron multiplier is a new type photocathode and fabricated by adding the avalanche electron multiplication layer in typical GaAs photocathode ,the hot clean temperature、electron gain and other performance of the photocathode component are investigated .The I-V characteristic of the photocathode component after and before hot cleaning was measured and analyzed .The experimental results were shown that photocathode component can endure 580℃ hot cleaning tem-perature and got electron gain 12.6 ,the radiation sensitivity is greater or equal to 3.87mA/w at 880nm of wave length ,the dark current density is less than or equal to 6.79 × 10-5 mA/cm2 .关键词
砷化镓/光阴极/雪崩倍增/电子增益/负电子亲和势Key words
GaAs/photocathode/avalanche mulitplication/electron gain/negative electron affinity分类
信息技术与安全科学引用本文复制引用
胡仓陆,郭晖,焦岗成,彭岔霞,冯驰,徐晓兵,周玉鉴,成伟,王书菲..电子倍增型GaAs光阴极实验研究[J].电子学报,2013,(8):1549-1554,6.
